WebIRF7343 Product details. Description. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon … WebData Sheet No. PD60062 rev P . IR2153(D)(S) & (PbF) 2 www.irf.com NOTE:For new designs, we recommend IR’s new product IRS2153D Note 1: This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
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WebIRF9Z34N Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Fig 12c. Maximum Avalanche Energy Vs. Drain Current QG QGS QGD VG Charge-10V Web2 www.irf.com Static @ T J = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BV DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆ΒV DSS/∆T J Breakdown Voltage Temp. Coefficient ––– 19 ––– mV/°C R DS(on) ––– 3.2 4.0 VGS(th) Gate Threshold Voltage 1.4 ––– 2.3 V ∆V GS(th)/∆T J Gate Threshold Voltage Coefficient ––– -5.4 ... WebFeb 24, 1999 · Infineon Technologies AG's IRF7343 is trans mosfet n/p-ch 55v 4.7a/3.4a 8-pin soic n t/r in the fet transistors, mosfets category. Check part details, parametric & … software hub ucl